S9012 TRANSISTOR Datasheet

S9012 Datasheet, PDF, Equivalent


Part Number

S9012

Description

PNP TRANSISTOR

Manufacture

JCST

Total Page 2 Pages
Datasheet
Download S9012 Datasheet


S9012
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9012 TRANSISTOR (PNP)
SOT23
FEATURES
z High Collector Current
z Complementary To S9013
z Excellent hFE Linearity
MARKING: 2T1
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-500
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature
150
BDTICTstg StorageTemperature
-55~+150
Unit
V
V
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
IC=-0.1mA, IE=0
IC=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
VCE=-1V, IC=-50mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-6V,IC=-20mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
-40
-25
-5
120
150
V
V
V
-0.1 uA
-0.1 uA
-0.1 uA
400
-0.6 V
-1.2 V
MHz
5 pF
CLASSIFICATION OF hFE
RANK
RANGE
L
120-200
H
200-350
J
300-400
www.BDTIC.com/jcst
B,Nov,2011

S9012
Typical Characterisitics
S9012
Static Characteristic
-100
400
-400uA
-350uA
-80
-300uA
COMMON
EMITTER
Ta=25
300
-250uA
-60
-200uA
200
-150uA
-40
-100uA
100
-20
IB=-50uA
h —— I
FE C
COMMON EMITTER
VCE=-1V
Ta=100
Ta=25
-0
-0 -4 -8 -12 -16 -20
COLLECTOR-EMITTER VOLTAGE VCE (V)
0
-1
-10
-100
-500
COLLECTOR CURRENT IC (mA)
-1000
-100
-10
-1
BDTIC-1
V —— I
CEsat
C
Ta=100
Ta=25
β=10
-10
-100
-500
-1.2
-0.8
-0.4
-0.0
-1
V —— I
BEsat
C
Ta=25
Ta=100
β=10
-10
-100
-500
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
500
f
T
——
I
C
C / C —— V / V
100
ob ib
CB EB
VCE=-6V
f=1MHz
Ta=25 oC
IE=0/ IC=0
Ta=25
Cib
Cob
10
100
-5
400
-10
COLLECTOR CURRENT IC (mA)
Pc —— Ta
-100
1
-0.1
-1
REVERSE VOLTAGE V (V)
-10 -20
300
200
100
0
0 25 50 75 100 125 150
www.BDTIC.com/jcstAMBIENTTEMPERATURE Ta ()


Features JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD SOT-23 Plastic-Encapsulate T ransistors S9012 TRANSISTOR (PNP) SOT –23 FEATURES z High Collector Curren t z Complementary To S9013 z Excellent hFE Linearity MARKING: 2T1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted) Symbo l Parameter Value VCBO Collector-Bas e Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -500 PC Co llector Power Dissipation 300 RΘJA T hermal Resistance From Junction To Ambi ent 416 Tj Junction Temperature 150 BDTICTstg StorageTemperature -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECT RICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collect or-base breakdown voltage Collector-emi tter breakdown voltage Emitter-base bre akdown voltage Collector cut-off curren t Collector cut-off current Emitter cut -off current DC current gain Collector- emitter saturation voltage Base-emitter saturation voltage Transition freque.
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