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2SD628

Part Number	2SD628
Manufacturer	INCHANGE
Description	Silicon NPN Darlington Power Transistor
Published	Jul 27, 2015
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ...
Datasheet	2SD628 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.
0V(Max.
)@ IC= 5A ·Complement to Type 2SB638 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 ...

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