Power Transistor. BDV94 Datasheet

BDV94 Transistor. Datasheet pdf. Equivalent

Part BDV94
Description Silicon PNP Power Transistor
Feature INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·C.
Manufacture INCHANGE
Datasheet
Download BDV94 Datasheet



BDV94
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector Current -IC= -10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94
-80V(Min)- BDV96
·Complement to Type BDV91/93/95
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCER
Collector-Emitter
Voltage
BDV92
BDV94
BDV96
-60
-80
-100
V
VCEO
Collector-Emitter
Voltage
BDV92
BDV94
BDV96
-60
-80
-100
V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Peak
-20 A
IB Base Current
-7 A
IE Emitter Current
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-14
100
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.25 /W
isc Product Specification
BDV92/94/96
isc websitewww.iscsemi.cn
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BDV94
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDV92/94/96
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV92
BDV94 IC= -100mA ;IB=0
BDV96
-60
-80
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
-1.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A
-3.0 V
VBE(sat) Base -Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= -4A; IB= -0.4A
IC= -4A ; VCE= -4V
VCE= VCEOmax;IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0; TJ= 150
VEB= -7V; IC=0
-1.6 V
-1.6 V
-0.2 mA
-0.1
-1.0
mA
-0.1 mA
hFE-1
DC Current Gain
IC= -4A ; VCE= -4V
20
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
5
fT Current-Gain—Bandwidth Product
Switching times
IC= -0.5A ;VCE= -10V
4
MHz
ton Turn-on Time
toff Turn-off Time
tf Fall Time
IC= -4A; IB1= -IB2= -0.4A;
VCC= -30V
0.3 μs
0.7 μs
0.3 μs
isc websitewww.iscsemi.cn
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