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H5N2507P
High Speed Power Switching MOSFET
Description
H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Drain to Source ...
Renesas Technology
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