|
|
Power MOSFET. IRF510S Datasheet |
|
|
|
www.vishay.com
IRF510S, SiHF510S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 10 V
8.3
2.3
3.8
Single
0.54
D2PAK (TO-263)
D
GD
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
Available
• Repetitive avalanche rated
• 175 °C operating temperature
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF510S-GE3
IRF510SPbF
SiHF510S-E3
D2PAK (TO-263)
SiHF510STRL-GE3 a
IRF510STRLPbF a
SiHF510STL-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
EAS
IAR
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D2PAK (TO-263)
SiHF510STRR-GE3 a
IRF510STRRPbF a
SiHF510STR-E3 a
LIMIT
100
± 20
5.6
4.0
20
0.29
0.025
75
5.6
4.3
43
3.7
5.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-2693-Rev. D, 16-Nov-15
1
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
IRF510S, SiHF510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 3.4 A b
VDS = 50 V, ID = 3.4 A b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and fig. 13 b
VDD = 50 V, ID = 5.6 A,
Rg = 24 , RD = 8.4 , see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN. TYP. MAX. UNIT
100 -
-V
- 0.12 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.54
1.3 -
-S
- 180 -
- 81 - pF
- 15 -
- - 8.3
- - 2.3 nC
- - 3.8
- 6.9 -
- 16 -
ns
- 15 -
- 9.4 -
- 4.5 -
nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM p - n junction diode
D
G
S
- - 5.6
A
- - 20
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.6 A, VGS = 0 V b
- - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b
-
-
100 200
0.44 0.88
ns
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-2693-Rev. D, 16-Nov-15
2
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF510S, SiHF510S
Vishay Siliconix
VGS
Top
101
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
4.5 V
10-1
91016_01
20 μs pulse width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom 4.5 V
4.5 V
10-1
91016_02
20 μs pulse width
TC = 175 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
101
25 °C
175 °C
100
10-1
4
91016_03
20 μs pulse width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 5.6 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
91016_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
400
320
240
160
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
80
Crss
0
100
91016_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 5.6 A
16 VDS = 80 V
VDS = 50 V
VDS = 20 V
12
8
4
0
0
91016_06
For test circuit
see figure 13
2 4 6 8 10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-2693-Rev. D, 16-Nov-15
3
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |