Power MOSFET. IRF510S Datasheet

IRF510S MOSFET. Datasheet pdf. Equivalent

IRF510S Datasheet
Recommendation IRF510S Datasheet
Part IRF510S
Description Power MOSFET
Feature IRF510S; www.vishay.com IRF510S, SiHF510S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (.
Manufacture Vishay
Datasheet
Download IRF510S Datasheet




Vishay IRF510S
www.vishay.com
IRF510S, SiHF510S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 10 V
8.3
2.3
3.8
Single
0.54
D2PAK (TO-263)
D
GD
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
Available
• Repetitive avalanche rated
• 175 °C operating temperature
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF510S-GE3
IRF510SPbF
SiHF510S-E3
D2PAK (TO-263)
SiHF510STRL-GE3 a
IRF510STRLPbF a
SiHF510STL-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
EAS
IAR
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D2PAK (TO-263)
SiHF510STRR-GE3 a
IRF510STRRPbF a
SiHF510STR-E3 a
LIMIT
100
± 20
5.6
4.0
20
0.29
0.025
75
5.6
4.3
43
3.7
5.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-2693-Rev. D, 16-Nov-15
1
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF510S
www.vishay.com
IRF510S, SiHF510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 3.4 A b
VDS = 50 V, ID = 3.4 A b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and fig. 13 b
VDD = 50 V, ID = 5.6 A,
Rg = 24 , RD = 8.4 , see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN. TYP. MAX. UNIT
100 -
-V
- 0.12 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.54
1.3 -
-S
- 180 -
- 81 - pF
- 15 -
- - 8.3
- - 2.3 nC
- - 3.8
- 6.9 -
- 16 -
ns
- 15 -
- 9.4 -
- 4.5 -
nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM p - n junction diode
D
G
S
- - 5.6
A
- - 20
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.6 A, VGS = 0 V b
- - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b
-
-
100 200
0.44 0.88
ns
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-2693-Rev. D, 16-Nov-15
2
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF510S
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF510S, SiHF510S
Vishay Siliconix
VGS
Top
101
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
4.5 V
10-1
91016_01
20 μs pulse width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom 4.5 V
4.5 V
10-1
91016_02
20 μs pulse width
TC = 175 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
101
25 °C
175 °C
100
10-1
4
91016_03
20 μs pulse width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 5.6 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
91016_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
400
320
240
160
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
80
Crss
0
100
91016_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 5.6 A
16 VDS = 80 V
VDS = 50 V
VDS = 20 V
12
8
4
0
0
91016_06
For test circuit
see figure 13
2 4 6 8 10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-2693-Rev. D, 16-Nov-15
3
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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