POWER TRANSISTORS. 2N3055 Datasheet

2N3055 TRANSISTORS. Datasheet pdf. Equivalent

Part 2N3055
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Feature 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m .
Manufacture CENTRAL SEMICONDUCTOR
Datasheet
Download 2N3055 Datasheet



2N3055
2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3055 and
MJ2955 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a hermetically sealed metal case, designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
100
70
60
7.0
15
7.0
115
-65 to +200
1.52
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=100V, VEB=1.5V
ICEV
VCE=100V, VEB=1.5V, TC=150°C
ICEO
VCE=30V
IEBO
VEB=7.0V
BVCEO
IC=200mA
60
BVCER
IC=200mA, RBE=100Ω
70
VCE(SAT) IC=4.0A, IB=400mA
VCE(SAT) IC=10A, IB=3.3A
VBE(ON)
VCE=4.0V, IC=4.0A
hFE VCE=4.0V, IC=4.0A
20
hFE VCE=4.0V, IC=10A
5.0
hfe VCE=4.0V, IC=1.0A, f=1.0kHz 15
fT
VCE=10V, IC=0.5A, f=1.0MHz
2.5
fhfe VCE=4.0V, IC=1.0A, f=1.0kHz
10
Is/b VCE=40V, t=1.0s
2.87
MAX
1.0
5.0
0.7
5.0
1.1
3.0
1.5
70
120
UNITS
V
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
MHz
kHz
A
R1 (26-July 2013)



2N3055
2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
R2
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (26-July 2013)





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