Power Transistors. 2N3055 Datasheet

2N3055 Transistors. Datasheet pdf. Equivalent

Part 2N3055
Description Complementary Power Transistors
Feature 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and swi.
Manufacture Multicomp
Datasheet
Download 2N3055 Datasheet



2N3055
2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
Power dissipation - PD = 115W at TC = 25°C.
DC current gain hFE = 20 to 70 at IC = 4.0A.
VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN
2N3055
PNP
MJ2955
15 Ampere
Complementary Silicon
Power Transistors
60 Volts
115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IC
IB
PD
TJ, TSTG
Rating
60
70
100
7.0
15
7.0
115
0.657
-65 to +200
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0



2N3055
2N3055, MJ2955
Complementary Power Transistors
Thermal Characteristics
Characteristic
Symbol
Thermal Resistance Junction to Case
Rθjc
Figure - 1 Power Derating
Maximum
1.52
Unit
°C/W
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, IB = 0)
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, RBE = 100)
Collector Cut off Current
(VCE = 30V, IB = 0)
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V)
(VCE = 100V, VBE(off) = 1.5V, TC = 150°C)
Emitter Cut off Current
(VEB = 7.0V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 4.0A, VCE = 4.0V)
(IC = 10A, VCE = 4.0A)
Collector-Emitter Saturation Voltage
(IC = 4.0A, IB = 0.4A)
(IC = 10A, IB = 3.3A)
Base-Emitter On Voltage
(IC = 4.0A, VCE = 4.0V)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC = 500mA, VCE = 10V, f = 1.0MHz)
Small-Signal Current Gain
(IC = 1.0A, VCE = 4.0V, f = 1KHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
(2) fT = hfe ftest.
VCEO(sus)
VCER(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(on)
fT
hfe
60
70
-
-
-
20
5.0
-
-
2.5
15
Maximum
-
-
0.7
1.0
5.0
5.0
70
1.1
3.0
1.5
-
120
Unit
V
mA
-
V
MHz
-
Page 2
31/05/05 V1.0





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