2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 to 70 at IC = 4.0A. VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base 2. Emitter Collector(Case)
Dimensions Minimum Maximum
A
38.75
39....
