Power Transistor. BUT11AF Datasheet


BUT11AF Transistor. Datasheet pdf. Equivalent


BUT11AF


High Voltage NPN Power Transistor
ON Semiconductort

FULL PAKt High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage.
• 1000 Volt VCES Rating • Low Base Drive Requirements • Isolated Overmold Package • Improved System Efficiency • No Isolating Washers Required • Reduced System Cost • High Isolation Voltage Capability (4500 VRMS)

BUT11AF
POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS
CASE 221D–02 TO–220 TYPE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage RMS Isolation Voltage (For 1 sec, TA = 25°C, Rel. Humidity < 30%)
Collector Current — Continuous Collector Current — Pulsed (1) Base Current — Continuous Base Current — Pulsed (1) Total Power Dissipation @ TC = 25°C*
Derated above 25°C

Per Figure 7 Per Figure 8 Per Figure 9

VCEO(sus) VCES VEBO VISOL1 VISOL2 VISOL3 IC ICM
IB IBM
PD

450
1000
9.0
4500
3500
2500
5.0 10
2.0 4.0
40 0.32

Vdc Vdc Vdc
V
Adc
Adc
Watts W/°C

Operating and Storage Temperature Range

TJ, Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case*

RθJC

3.125

°C/W

Maximum Lead...



BUT11AF
ON Semiconductort
FULL PAKt
High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching
power supplies in a wide range of end use applications. This device
combines the latest state of the art bipolar fabrication techniques to
provide excellent switching, high voltage capability and low
saturation voltage.
1000 Volt VCES Rating
Low Base Drive Requirements
Isolated Overmold Package
Improved System Efficiency
No Isolating Washers Required
Reduced System Cost
High Isolation Voltage Capability (4500 VRMS)
BUT11AF
POWER TRANSISTOR
5.0 AMPERES
450 VOLTS
40 WATTS
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
RMS Isolation Voltage (For 1 sec,
TA = 25°C, Rel. Humidity < 30%)
Collector Current — Continuous
Collector Current — Pulsed (1)
Base Current — Continuous
Base Current — Pulsed (1)
Total Power Dissipation @ TC = 25°C*
Derated above 25°C
Per Figure 7
Per Figure 8
Per Figure 9
VCEO(sus)
VCES
VEBO
VISOL1
VISOL2
VISOL3
IC
ICM
IB
IBM
PD
450
1000
9.0
4500
3500
2500
5.0
10
2.0
4.0
40
0.32
Vdc
Vdc
Vdc
V
Adc
Adc
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case*
RθJC
3.125
°C/W
Maximum Lead Temperature for soldering purposes
1/8from case for 5 sec.
TL 260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),
the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 4
1
Publication Order Number:
BUT11AF/D

BUT11AF
BUT11AF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Figures 1 & 2)
(IC = 100 mAdc, IB = 0, L = 25 µH)
Collector Cutoff Current
(VCE = 1000 Vdc, VBE = 0)
(VCE = 1000 Vdc, VBE = 0, TJ = 125°C)
Emitter-Base Leakage
(VEB = 9.0 Vdc, IC = 0)
VCEO(sus)
450
– Vdc
ICES
IEBO
mAdc
– – 1.0
– – 2.0
– – 10 mAdc
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 0.5 Adc)
Base-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 0.5 Adc)
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
VCE(sat)
– 1.5 Vdc
VBE(sat)
– 1.5 Vdc
hFE 10 – – –
––
DYNAMIC CHARACTERISTICS
Insulation Capacitance (Collector to External Heatsink)
Cc-hs
– 15 – pF
SWITCHING CHARACTERISTICS
Inductive Load (Figures 3 & 4)
Storage
Fall Time
Storage
IC = 2.5 Adc, IB1 = 0.5 Adc
Fall Time
Resistive Load (Figures 5 & 6)
TJ = 25°C
TJ = 100°C
ts
1100 1400
ns
tfi – 80 150
ts – 1200 1500
tfi – 140 300
Turn-On Time
Storage Time
IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc
Fall Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
ton
1000
ns
ts – – 4000
tf – – 800
250
200
IC
(mA)
100
0
MIN
VCEO(sus)
VCE (V)
Figure 1. Oscilloscope Display for Sustaining Voltage
VIN
0
tp
T
+50 V
100Ă-Ă200
L
VERT.
OSCILLOSCOPE
HOR.
OSCILLOSCOPE
1
Figure 2. Test Circuit for VCEO(sus)
http://onsemi.com
2




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