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DF2B6.8FS

Toshiba Semiconductor
Part Number DF2B6.8FS
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 8, 2016
Detailed Description CATHODE MARK 0.1 0.8±0.05 0.1 1.0±0.05 TOSHIBA Diodes for Protecting against ESD DF2B6.8FS DF2B6.8FS Product for Use ...
Datasheet PDF File DF2B6.8FS PDF File

DF2B6.8FS
DF2B6.8FS

Overview
CATHODE MARK 0.
1 0.
8±0.
05 0.
1 1.
0±0.
05 TOSHIBA Diodes for Protecting against ESD DF2B6.
8FS DF2B6.
8FS Product for Use Only as Protection against Electrostatic Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
Unit in mm 0.
6±0.
05 A Abusolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Power dissipation P 150* Junction temperature Tj 150 Storage temperature range Tstg −55 to 150 *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension of 4 mm × 4 mm.
Unit mW °C °C 0.
2 0.
07M A ±0.
05 0.
1±0.
05 0.
48+-...


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