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MMBT5550

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NPN Transistor


Description
MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC MECHANICA DATA *Case: Molded plastic *Epoxy: UL 94V-O rate flame retardant *Lead: MIL-STD-202E method 2...



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MMBT5550

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