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2SK2185

Part Number	2SK2185
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jun 25, 2016
Detailed Description	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fas...
Datasheet	2SK2185 PDF File

Overview

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A ID(puls) Pulse Drain Current 15 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK2185 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2185 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VSD Forward On-Voltage IS=2.
5A; VGS=0 RDS(on) Drain-Source On-Resistance VG...

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