N-Channel MOSFET
Description
HFS4N65F
July 2015
HFS4N65F
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.0 ȍ7\S#9GS=10V 100% Avalanche Tes...
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