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IRF636

N-Channel Mosfet Transistor

Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF636 DESCRIPTION ·Drain Current –ID=8.1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·Nanosecond Switching Speed ·High Input Impedance APPLICATIONS ·High current , high speed switching ·Switch mode power supplie...

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