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IRF645

Inchange Semiconductor
Part Number IRF645
Manufacturer Inchange Semiconductor
Description N-Channel Mosfet Transistor
Published Aug 6, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ·FEATURES ·Avalanche Rugged Te...
Datasheet PDF File IRF645 PDF File

IRF645
IRF645


Overview
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.
) @ VDS = 250V ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V V ID Drain Current-Continuous 13 A IDM Drain Current-Single Plused 52 A PD Total Dissipation @TC=25℃ 125 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c RθJA Thermal Resistance,Junction to Case Junction-to-Ambient MAX UNIT 1.
0 ℃/W 80 ℃/W isc website：www.
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cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.
25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.
25mA VGS= 10V; ID= 8A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS=0 VSD Forward On-Voltage IS= 14A; VGS=0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.
0MHz MIN MAX UNIT 250 V 24V 0.
34 Ω ±500 nA 250 uA 1.
8 V 1600 pF 210 pF 95 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=125V,ID=14A RG=9.
1Ω Tf Fall Time MIN TYP MAX UNIT 16 24 ns 67 100 ns 53 80 ns 49 74 ns isc website：www.
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