NPN Transistor
Description
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBTH10LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.225 W (Tamb=25℃)
Collector current
ICM: 0.05 Collector-base voltage
A
V(BR)CBO: 30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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