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NE662M16
NPN SILICON RF TRANSISTOR
Description
DISCONTINUED
NPN
SILICON RF
TRANSISTOR
NE662M16 / 2SC5704
NPN
SILICON RF
TRANSISTOR
FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6...
CEL
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