Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
BDY55X
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
...
Inchange Semiconductor
BDY55X PDF File
Similar Datasheet