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2SC5252

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High speed switching High breakdown voltage VCBO = 1500 V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCE...

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