MOSFET
Description
FDMC8882 N-Channel Power Trench® MOSFET
FDMC8882
N-Channel Power Trench® MOSFET
30 V, 16 A, 14.3 m:
May 2014
Features
General Description
Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Chann...
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