MOSFET
Description
WPMD2008
Dual P-Channel, -20 V, - 4 .1A, Power MOSFET
Description
The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free.
Features
9 %5 '66 í20 V
5'6 RQ 0$;
110m¡@ í4.5V 138m¡@ í2.5V
WPMD2008
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