MOSFET
Description
WPMD2011
Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET
V(BR)DSS -20
Rds(on) ()
0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1.8V 0.090 @ -1.5V
Description
The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC co...
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