WPMD2013
Dual P-Channel, -20V, -0.64A, Small Signal MOSFET
VDS (V) -20
Rds(on) (ȍ)
0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.860@ VGS=-1.8V
Descriptions
The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver...
