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K9F1G08U0M

Part Number	K9F1G08U0M
Manufacturer	Samsung semiconductor
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Published	Sep 26, 2017
Detailed Description	www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M ...
Datasheet	K9F1G08U0M PDF File

Overview

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0 1.
Initial issue Draft Date July.
5.
2001 Remark Advance 0.
1 1.
Iol(R/B) of 1.
8V is changed.
- min.
value : 7mA --> 3mA - Typ.
value : 8mA --> 4mA Nov.
5.
2001 2.
AC parameter is changed.
tRP(min.
) : 30ns --> 25ns 3.
A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
Dec.
4.
2001...

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