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BLV193

Part Number	BLV193
Manufacturer	NXP
Description	UHF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors...
Datasheet	BLV193 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors Product speciﬁcation UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band.
The transistor has a SOT171 flange envelope with a ceramic cap.
All leads are isolated from the mounting base.
PINNING - SOT171 1 2 4 6 MBB012 BLV193 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION c.
w.
cla...

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