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BL3435

P-Channel Power Mosfet

Description

Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES  Electrostatic Sensitive Devices.  VDS (V) =- 20V  ID = -3.5 A(VGS = -4.5V)  RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect tra...

GME

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