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2N3790

Part Number	2N3790
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 16, 2018
Detailed Description	: SILICON PNP TRIPLE DIFFUSED TYPE 33 POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High ...
Datasheet	2N3790 PDF File

Overview

: SILICON PNP TRIPLE DIFFUSED TYPE 33 POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS.
FEATURES .
High Gain and Excellent hFE Linearity: hFE=15(Min.
) @ VC E=-2V, Ic=-3A Low Saturation Voltage: VcE(sat)=-1.
0V(Max.
) @ I C=-4A, Ib=-0.
4A Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 & C Junction Temperature % Storage Temperature Range SYMBOL VCBO VCEO VEBO IC I CM IB L Stg RATING -80 -80 -7 -10 -15 -4 150 0.
86 200 -65~ 200 UNIT u w/ c 1.
BASE 2.
EMITTER COLLECTOR (CASE) TO—2 4MA/T0— TC—...

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