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2N3081

Part Number	2N3081
Manufacturer	Motorola
Description	PNP SILICON TRANSISTOR
Published	Nov 6, 2018
Detailed Description	30812N (SIUCON) PNP SILICON ANNULAR TRANSISTOR · .. designed for medium-speed switching and general-purpose amplificati...
Datasheet	2N3081 PDF File

Overview

30812N (SIUCON) PNP SILICON ANNULAR TRANSISTOR · .
.
designed for medium-speed switching and general-purpose amplification applications in industrial service.
• High Collector-Base Breakdown Voltage BVCBO = 70 Vdc (Min) @ IC = 10 /LAdc • Low Collector-Emitte'r Saturation Voltage VCE(sat) = 0.
3 Vdc (Max) @ IC = 150 mAdc PNPSILICON TRANSISTOR *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Ba.
.
Voltage Emitter-Base Voltage Collector Current - Continuous Total Oeviee Dissipation@TA - 25°C Derate above 25°C Total Device Dissipation@Tc-250C Derate above 25°C Storage Temperature Range ·'ndicates JEOEC Registered Data.
Symbol VCEO VCB VEB IC Po Po Tstg Value 50 70 6.
0 600 0.
6 3.
4 2.
...

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