HM4487B
P-Channel Enhancement Mode Power MOSFET
Description
The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
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General Features
● VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V
(Typ:170mΩ)
● Super high dense cell design ● Adv...