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BAS116L

nexperia
Part Number BAS116L
Manufacturer nexperia
Description Low-leakage diode
Published Feb 22, 2019
Detailed Description BAS116L Low-leakage diode 4 May 2016 Product data sheet 1. General description Single low leakage current switching di...
Datasheet PDF File BAS116L PDF File

BAS116L
BAS116L

Overview
BAS116L Low-leakage diode 4 May 2016 Product data sheet 1.
General description Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Switching time typical: trr = 0.
8 µs • Low leakage current typical: IR = 3 pA • Repetitive peak reverse voltage: VRRM ≤ 85 V • Low capacitance typical: Cd = 2 pF • Leadless ultra small SMD plastic package • Low package height of 0.
48 mm • AEC-Q101 qualified 3.
Applications • Low-leakage current applications • General-purpose switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj = 25 °C VF forward voltage IF = 150 mA; Tj = 25 °C IR reverse current VR = 75 V; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω...


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