650V 4A Advanced N-Ch Power MOSFET
Description
AM4N65R
650V 4A Advanced N-Ch Power MOSFET
FEATURES
■ Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.) ■ Low gate charge : Qg = 12nC (Typ.) ■ Low reverse transfer capacitance : Crss = 12pF (Typ.) ■ Lower EMI Noise ■ RoHS compliant device ■ 100% avalanche tested
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