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2SJ177

Hitachi
Part Number 2SJ177
Manufacturer Hitachi
Description Silicon P-Channel MOSFET
Published Sep 16, 2019
Detailed Description 2SJ177 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SJ177 PDF File

2SJ177
2SJ177

Overview
2SJ177 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1.
Gate G 2.
Drain 3.
Source S 2SJ177 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ra...


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