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NTE2997

NTE
Part Number NTE2997
Manufacturer NTE
Description P-Channel MOSFET
Published Jan 23, 2020
Detailed Description NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Sw...
Datasheet PDF File NTE2997 PDF File

NTE2997
NTE2997

Overview
NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D G S Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX .
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160V Gate−Source Voltage, VGSS .
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±15V Drain Current, ID .
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7A Body to Drain Diode Reverse Drain Current, IDR .
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7A Channel Dissiption (TC = +25°C), PCH .
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100W Channel Temperature TCH .
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+150°C Storage Temperature Range, Tstg .
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−55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage Gate−Source Breakdown Voltage Gate−Source Cutoff Voltage Drain−Source Saturation Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn−On Time Turn−Off Time V(BR)DSS ID = 10mA, VGS = 10V 160 − − V(BR)GSS IG = ±100µA, VDS = 0 ±15 − − VGS(off) ID = 100mA, VDS = 10V 0.
15 − 1.
45 VDS(sat) ID = 7A, VGS = 0, Note 1 − − 12 |yfs| ID = 3A, VDS = 10V, Note 1 0.
7 1.
0 1.
4 Ciss VDS = 10V, f = 1MHz, VGS = 5V − 900 − Coss − 400 − Crss − 40...


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