PNP Transistor
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -0.25A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequ...
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