NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifications and TV vertical
deflection output applications.
ABSOLUTE MAXI...
Similar Datasheet
