NPN Transistor
Description
isc Silicon NPN Power Transistor
2SD1268
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB943 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching appl...
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