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2SD1890

NPN Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 2A ·Complement to Type 2SB1250 ·Minimum Lot-to-Lot variations for robust device performance and relia...

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