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IPD053N06N

Part Number	IPD053N06N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·En...
Datasheet	IPD053N06N PDF File

Overview

isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.
3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-cas...

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