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2SD1817

NPN Transistor

Description

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters a...

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