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TTC011

Toshiba

NPN Transistor


Description
Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 1. Applications High-Voltage Switching LCD Backlighting 2. Features (1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (T...



Toshiba

TTC011

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