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2SC5886A

Toshiba

Silicon NPN Transistor


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications 2SC5886A Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R...



Toshiba

2SC5886A

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