IGBT - SMPS 600 V, 40 A
HGTG20N60A4
Description The HGTG20N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for...
