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2SJ103

Toshiba Semiconductor
Part Number 2SJ103
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Const...
Datasheet PDF File 2SJ103 PDF File

2SJ103
2SJ103

Overview
2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.
0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.
) (IDSS = −5 mA) Complimentary to 2SK246 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 -10 300 125 -55~125 Unit V mA mW °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1C Weight: 0.
21 g (typ.
) Electrical Characteristics (Ta = 25°C) Characteristics Gat...


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