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2SJ108

Toshiba Semiconductor
Part Number 2SJ108
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications ...
Datasheet PDF File 2SJ108 PDF File

2SJ108
2SJ108

Overview
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.
) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.
95 nV/Hz1/2 (typ.
) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High input impedance: IGSS = 1.
0 nA (max) (VGS = 25 V) · Complementary to 2SK370 · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 200 125 -55~125 Electrical Characteristics (Ta = 25°C) Uni...


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