Silicon P-Channel MOSFET
Description
2SJ532
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-653B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.042 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
TO–220CFM
D
G
1 2 S
3
1. Gate 2. Drain 3. Source
2SJ532
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage...
Hitachi Semiconductor
2SJ532 PDF File
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