2SJ576
Silicon P Channel MOS FET High Speed Switching
ADE-208-741B (Z) 3rd.Edition. June 1999 Features
Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (CMPAK)
Outline
CMPAK
3
1 2 D 3
2 G
1. Source 2. Gate 3. Drain
S 1
2SJ576
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