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2SK3320

Toshiba Semiconductor
Part Number 2SK3320
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 2SK3320 For Low Noise Audio Amplifier Applicat...
Datasheet PDF File 2SK3320 PDF File

2SK3320
2SK3320

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 2SK3320 For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.
) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.
0dB (typ.
) (VDS = 10 V, ID = 0.
5 mA, f = 1 kHz, RG = 1 kΩ) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD (Note 1) 200 mW JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 125 °...


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