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2SK3342

Toshiba Semiconductor
Part Number 2SK3342
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3342 Switching Regulator Applications DC...
Datasheet PDF File 2SK3342 PDF File

2SK3342
2SK3342

Overview
2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3342 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.
8 Ω (typ.
) : |Yfs| = 4.
5 S (typ.
) Unit: mm : IDSS = 100 µA (max) (VDS = 250 V) : Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 4.
5 18 20 51 4.
5 2.
0 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Weight: 0.
36 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.
25 125 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.
28 mH, RG = 25 Ω, IAR = 4.
5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.
36 g (typ.
) 1 2002-01-25 2SK3342 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V...


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