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2SK3390

Hitachi Semiconductor

N-Channel MOSFET


Description
2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1. Gate 2. Source 3. Drain Note: Marking is “IX”. This Device is sen...



Hitachi Semiconductor

2SK3390

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