DatasheetsPDF.com

3N164

Part Number	3N164
Manufacturer	Linear Integrated Systems
Description	P-CHANNEL ENHANCEMENT MODE
Published	Mar 30, 2005
Detailed Description	3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE...
Datasheet	3N164 PDF File

Overview

3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltage (NOTE 1) Drain Current Storage Temperature Power Dissipation D S G 2 1 3 4 Case D S -40V -30V ±125V 50mA -65°C to +200°C 375mW G Case 18 X 30 MILS TO-72 Bottom View ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS 3N163 3N164 MIN MAX MIN MAX Gate Forward Current -10 -10 pA IGSSF TA=+125°C -25 -40 -40 -2.
0 -2.
0 -3.
0 -5.
0 -5.
0 -6.
5 200 400 ...

Similar Datasheet

3N100E MTB3N100E - Motorola
3N1012 Power-Transistor - Infineon
3N10L26 Power-Transistor - Infineon
3N124 N-channel Transistor - ETC
3N125 N-channel Transistor - ETC
3N126 N-channel Transistor - ETC
3N128 MOSFET AMPLIFIER - Motorola
3N128 Silicon MOS Transistor - General Electric Solid State
3N140 N-CHANNEL DUAL-GATE TRANSISTOR - ETC
3N142 SILICON INSULATED GATE FIELD EFFECT TRANSISTOR - ETC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)