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3N170

Part Number	3N170
Manufacturer	Linear Integrated Systems
Description	N-CHANNEL MOSFET ENHANCEMENT MODE
Published	Mar 30, 2005
Detailed Description	3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTA...
Datasheet	3N170 PDF File

Overview

3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Gate Drain to Source Gate to Source ±35V 25V ±35V 30mA * Body tied to Case.
300mW -65 to +150 °C -55 to +135 °C 1 N-CHANNEL MOSFET ENHANCEMENT MODE rds(on) ≤ 200Ω td(on) ≤ 3.
0ns TO-72 BOTTOM VIEW G 2 3 D S 1 4 C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) ...

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